B1D30065TF BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO3PF; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO3PF
Max. forward voltage: 1.62V
Max. forward impulse current: 110A
Leakage current: 30µA
Kind of package: tube
Max. load current: 30A
Power dissipation: 31W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 7.12 EUR |
| 13+ | 5.61 EUR |
| 150+ | 5.39 EUR |
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Technische Details B1D30065TF BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO3PF; Ir: 30uA, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 15A x2, Semiconductor structure: common cathode; double, Case: TO3PF, Max. forward voltage: 1.62V, Max. forward impulse current: 110A, Leakage current: 30µA, Kind of package: tube, Max. load current: 30A, Power dissipation: 31W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1D30065TF nach Preis ab 5.61 EUR bis 7.12 EUR
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B1D30065TF | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO3PF; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO3PF Max. forward voltage: 1.62V Max. forward impulse current: 110A Leakage current: 30µA Kind of package: tube Max. load current: 30A Power dissipation: 31W |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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