B1D40065H BASiC SEMICONDUCTOR


B1D40065H.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+11.23 EUR
9+10.1 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details B1D40065H BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 40A, Semiconductor structure: single diode, Case: TO247-2, Max. forward voltage: 1.62V, Max. forward impulse current: 310A, Leakage current: 20µA, Kind of package: tube, Power dissipation: 185W.