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B1M080120HC

B1M080120HC BASiC SEMICONDUCTOR

B1M080120HC.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
On-state resistance: 80mΩ
Pulsed drain current: 80A
Power dissipation: 241W
Gate charge: 149nC
Polarisation: unipolar
Technology: SiC
Drain current: 27A
Kind of channel: enhancement
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Technische Details B1M080120HC BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W, Case: TO247-3, Mounting: THT, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, Kind of package: tube, On-state resistance: 80mΩ, Pulsed drain current: 80A, Power dissipation: 241W, Gate charge: 149nC, Polarisation: unipolar, Technology: SiC, Drain current: 27A, Kind of channel: enhancement.