B1M080120HC BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 18.39 EUR |
| 150+ | 18.2 EUR |
| 600+ | 17.67 EUR |
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Technische Details B1M080120HC BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W, Case: TO247-3, Mounting: THT, Kind of package: tube, On-state resistance: 80mΩ, Drain current: 27A, Power dissipation: 241W, Pulsed drain current: 80A, Drain-source voltage: 1.2kV, Kind of channel: enhancement, Technology: SiC, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 149nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1M080120HC nach Preis ab 18.39 EUR bis 18.39 EUR
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B1M080120HC | Hersteller : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 80mΩ Drain current: 27A Power dissipation: 241W Pulsed drain current: 80A Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: SiC Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 149nC |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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