B1M080120HK BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 27A, Power dissipation: 241W, Case: TO247-4, Gate-source voltage: -5...20V, On-state resistance: 80mΩ, Mounting: THT, Gate charge: 149nC, Kind of channel: enhancement, Pulsed drain current: 80A, Features of semiconductor devices: Kelvin terminal, Kind of package: tube.