B1M080120HK BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 27A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 241W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 149nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 80A
Mounting: THT
Case: TO247-4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 19.65 EUR |
| 150+ | 18.89 EUR |
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Technische Details B1M080120HK BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W, Kind of package: tube, Drain-source voltage: 1.2kV, Drain current: 27A, On-state resistance: 80mΩ, Type of transistor: N-MOSFET, Power dissipation: 241W, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Gate charge: 149nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Pulsed drain current: 80A, Mounting: THT, Case: TO247-4, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1M080120HK nach Preis ab 19.65 EUR bis 19.65 EUR
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B1M080120HK | Hersteller : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Kind of package: tube Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 241W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 149nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 80A Mounting: THT Case: TO247-4 |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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