B1M080120HK BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
On-state resistance: 80mΩ
Drain current: 27A
Pulsed drain current: 80A
Power dissipation: 241W
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 25.17 EUR |
| 5+ | 22.65 EUR |
| 30+ | 20.01 EUR |
| 150+ | 18.95 EUR |
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Technische Details B1M080120HK BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Mounting: THT, Technology: SiC, Case: TO247-4, Kind of package: tube, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 149nC, On-state resistance: 80mΩ, Drain current: 27A, Pulsed drain current: 80A, Power dissipation: 241W, Drain-source voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B1M080120HK nach Preis ab 22.65 EUR bis 25.17 EUR
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B1M080120HK | Hersteller : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Technology: SiC Case: TO247-4 Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 149nC On-state resistance: 80mΩ Drain current: 27A Pulsed drain current: 80A Power dissipation: 241W Drain-source voltage: 1.2kV |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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