B2D04065E1 BASiC SEMICONDUCTOR


B2D04065E1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 20µA
Max. forward voltage: 1.6V
Load current: 4A
Max. forward impulse current: 31A
Power dissipation: 39W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
auf Bestellung 2451 Stücke:

Lieferzeit 14-21 Tag (e)
AnzahlPreis
69+1.04 EUR
76+0.94 EUR
87+0.83 EUR
100+0.74 EUR
Mindestbestellmenge: 69 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details B2D04065E1 BASiC SEMICONDUCTOR

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape, Case: TO252-2, Mounting: SMD, Kind of package: reel; tape, Leakage current: 20µA, Max. forward voltage: 1.6V, Load current: 4A, Max. forward impulse current: 31A, Power dissipation: 39W, Max. off-state voltage: 650V, Semiconductor structure: single diode, Technology: SiC, Type of diode: Schottky rectifying.