B2D04065E1 BASiC SEMICONDUCTOR


B2D04065E1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Mounting: SMD
Max. forward impulse current: 31A
Max. forward voltage: 1.6V
Power dissipation: 39W
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20µA
Case: TO252-2
Type of diode: Schottky rectifying
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Technische Details B2D04065E1 BASiC SEMICONDUCTOR

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape, Mounting: SMD, Max. forward impulse current: 31A, Max. forward voltage: 1.6V, Power dissipation: 39W, Technology: SiC, Max. off-state voltage: 650V, Load current: 4A, Kind of package: reel; tape, Semiconductor structure: single diode, Leakage current: 20µA, Case: TO252-2, Type of diode: Schottky rectifying.