
B2D04065K1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
35+ | 2.04 EUR |
53+ | 1.34 EUR |
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Technische Details B2D04065K1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 4A, Semiconductor structure: single diode, Case: TO220-2, Max. forward voltage: 1.6V, Max. forward impulse current: 34A, Leakage current: 20µA, Kind of package: tube, Power dissipation: 39W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D04065K1 nach Preis ab 2.04 EUR bis 2.04 EUR
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B2D04065K1 | Hersteller : BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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