B2D04065K1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Case: TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.6V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 34A
Leakage current: 20µA
Power dissipation: 39W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.65 EUR |
| 54+ | 1.33 EUR |
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Technische Details B2D04065K1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V, Case: TO220-2, Max. off-state voltage: 650V, Max. forward voltage: 1.6V, Load current: 4A, Semiconductor structure: single diode, Max. forward impulse current: 34A, Leakage current: 20µA, Power dissipation: 39W, Kind of package: tube, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D04065K1 nach Preis ab 2.65 EUR bis 2.65 EUR
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B2D04065K1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Case: TO220-2 Max. off-state voltage: 650V Max. forward voltage: 1.6V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 34A Leakage current: 20µA Power dissipation: 39W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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