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B2D10065E1 BASiC SEMICONDUCTOR

B2D10065E1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.55V
Max. forward impulse current: 65A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 52W
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Technische Details B2D10065E1 BASiC SEMICONDUCTOR

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 10A, Semiconductor structure: single diode, Case: TO252-2, Max. forward voltage: 1.55V, Max. forward impulse current: 65A, Leakage current: 20µA, Kind of package: reel; tape, Power dissipation: 52W.