Produkte > BASIC SEMICONDUCTOR > B2D10065Q

B2D10065Q BASiC SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8BB9C41A785080D2&compId=B2D10065Q.pdf?ci_sign=5257898dd3bccbbba3b7fe5f364e72b8303b2688

Hersteller: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.67V
Leakage current: 20µA
Max. forward impulse current: 70A
Kind of package: reel; tape
Power dissipation: 54W

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details B2D10065Q BASiC SEMICONDUCTOR

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 10A; reel,tape, Type of diode: Schottky rectifying, Case: DFN8x8, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 10A, Semiconductor structure: single diode, Max. forward voltage: 1.67V, Leakage current: 20µA, Max. forward impulse current: 70A, Kind of package: reel; tape, Power dissipation: 54W.