Produkte > BASIC SEMICONDUCTOR > B2D10120H1
B2D10120H1

B2D10120H1 BASiC SEMICONDUCTOR

B2D10120H1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Power dissipation: 62W
Max. forward impulse current: 90A
Max. forward voltage: 2V
Kind of package: tube
Leakage current: 30µA
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Technische Details B2D10120H1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 10A, Semiconductor structure: single diode, Case: TO247-2, Power dissipation: 62W, Max. forward impulse current: 90A, Max. forward voltage: 2V, Kind of package: tube, Leakage current: 30µA.