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B2D10120HC1

B2D10120HC1 BASiC SEMICONDUCTOR

B2D10120HC1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Mounting: THT
Max. forward impulse current: 55A
Max. forward voltage: 1.8V
Power dissipation: 64W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 10A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 20µA
Case: TO247-3
Type of diode: Schottky rectifying
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Technische Details B2D10120HC1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA, Mounting: THT, Max. forward impulse current: 55A, Max. forward voltage: 1.8V, Power dissipation: 64W, Technology: SiC, Max. off-state voltage: 1.2kV, Load current: 5A x2, Max. load current: 10A, Kind of package: tube, Semiconductor structure: common cathode; double, Leakage current: 20µA, Case: TO247-3, Type of diode: Schottky rectifying.