B2D10120HC1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 64W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 10A
Max. forward voltage: 1.8V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 55A
Leakage current: 20µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| 600+ | 2.27 EUR |
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Technische Details B2D10120HC1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA, Case: TO247-3, Mounting: THT, Kind of package: tube, Power dissipation: 64W, Type of diode: Schottky rectifying, Technology: SiC, Max. off-state voltage: 1.2kV, Max. load current: 10A, Max. forward voltage: 1.8V, Load current: 5A x2, Semiconductor structure: common cathode; double, Max. forward impulse current: 55A, Leakage current: 20µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D10120HC1 nach Preis ab 3.76 EUR bis 3.76 EUR
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B2D10120HC1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 64W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 10A Max. forward voltage: 1.8V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 55A Leakage current: 20µA |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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