B2D16065HC1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 11µA
Max. forward voltage: 1.73V
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 11µA
Max. forward voltage: 1.73V
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 4.36 EUR |
| 19+ | 3.92 EUR |
| 21+ | 3.46 EUR |
| 30+ | 3.33 EUR |
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Technische Details B2D16065HC1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA, Mounting: THT, Semiconductor structure: common cathode; double, Type of diode: Schottky rectifying, Technology: SiC, Leakage current: 11µA, Max. forward voltage: 1.73V, Load current: 8A x2, Max. load current: 16A, Max. off-state voltage: 650V, Case: TO247-3, Kind of package: tube.