B2D16120HC1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Semiconductor structure: common cathode; double
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.82V
Load current: 8A x2
Max. load current: 16A
Power dissipation: 74W
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 17+ | 4.33 EUR |
| 30+ | 3.85 EUR |
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Technische Details B2D16120HC1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA, Semiconductor structure: common cathode; double, Mounting: THT, Kind of package: tube, Type of diode: Schottky rectifying, Technology: SiC, Case: TO247-3, Leakage current: 30µA, Max. forward voltage: 1.82V, Load current: 8A x2, Max. load current: 16A, Power dissipation: 74W, Max. forward impulse current: 80A, Max. off-state voltage: 1.2kV.