B2D16120HC1

B2D16120HC1 BASiC SEMICONDUCTOR


B2D16120HC1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Semiconductor structure: common cathode; double
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.82V
Load current: 8A x2
Max. load current: 16A
Power dissipation: 74W
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
auf Bestellung 33 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.82 EUR
17+4.33 EUR
30+3.85 EUR
Mindestbestellmenge: 15
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Technische Details B2D16120HC1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA, Semiconductor structure: common cathode; double, Mounting: THT, Kind of package: tube, Type of diode: Schottky rectifying, Technology: SiC, Case: TO247-3, Leakage current: 30µA, Max. forward voltage: 1.82V, Load current: 8A x2, Max. load current: 16A, Power dissipation: 74W, Max. forward impulse current: 80A, Max. off-state voltage: 1.2kV.