B2D16120HC1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.82V
Max. load current: 16A
Max. forward impulse current: 80A
Power dissipation: 74W
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 17+ | 4.33 EUR |
| 30+ | 3.85 EUR |
| 150+ | 3.37 EUR |
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Technische Details B2D16120HC1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA, Type of diode: Schottky rectifying, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 8A x2, Semiconductor structure: common cathode; double, Case: TO247-3, Kind of package: tube, Leakage current: 30µA, Max. forward voltage: 1.82V, Max. load current: 16A, Max. forward impulse current: 80A, Power dissipation: 74W, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D16120HC1 nach Preis ab 3.85 EUR bis 4.82 EUR
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B2D16120HC1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.82V Max. load current: 16A Max. forward impulse current: 80A Power dissipation: 74W Technology: SiC |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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