B2D20065H1

B2D20065H1 BASiC SEMICONDUCTOR


B2D20065H1.pdf Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Mounting: THT
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 15µA
Load current: 20A
Power dissipation: 130W
Max. forward impulse current: 146A
Max. forward voltage: 1.7V
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-2
auf Bestellung 19 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.03 EUR
16+4.52 EUR
18+4 EUR
Mindestbestellmenge: 15
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Technische Details B2D20065H1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA, Mounting: THT, Semiconductor structure: single diode, Technology: SiC, Type of diode: Schottky rectifying, Leakage current: 15µA, Load current: 20A, Power dissipation: 130W, Max. forward impulse current: 146A, Max. forward voltage: 1.7V, Max. off-state voltage: 650V, Kind of package: tube, Case: TO247-2.