B2D20065TF BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 20µA
Load current: 10A x2
Power dissipation: 33W
Max. forward impulse current: 70A
Max. forward voltage: 1.62V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO3PF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.06 EUR |
| 20+ | 3.6 EUR |
| 30+ | 3.58 EUR |
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Technische Details B2D20065TF BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA, Mounting: THT, Semiconductor structure: common cathode; double, Technology: SiC, Type of diode: Schottky rectifying, Leakage current: 20µA, Load current: 10A x2, Power dissipation: 33W, Max. forward impulse current: 70A, Max. forward voltage: 1.62V, Max. load current: 20A, Max. off-state voltage: 650V, Kind of package: tube, Case: TO3PF, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D20065TF nach Preis ab 3.58 EUR bis 4.06 EUR
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B2D20065TF | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying Leakage current: 20µA Load current: 10A x2 Power dissipation: 33W Max. forward impulse current: 70A Max. forward voltage: 1.62V Max. load current: 20A Max. off-state voltage: 650V Kind of package: tube Case: TO3PF |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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