B2D20065TF BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Case: TO3PF
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 70A
Power dissipation: 33W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.06 EUR |
| 20+ | 3.6 EUR |
| 30+ | 3.59 EUR |
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Technische Details B2D20065TF BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA, Case: TO3PF, Mounting: THT, Kind of package: tube, Leakage current: 20µA, Max. forward voltage: 1.62V, Load current: 10A x2, Max. load current: 20A, Max. forward impulse current: 70A, Power dissipation: 33W, Max. off-state voltage: 650V, Semiconductor structure: common cathode; double, Technology: SiC, Type of diode: Schottky rectifying, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D20065TF nach Preis ab 3.59 EUR bis 4.06 EUR
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B2D20065TF | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Case: TO3PF Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.62V Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 70A Power dissipation: 33W Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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