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B2D20065TF

B2D20065TF BASiC SEMICONDUCTOR

B2D20065TF.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO3PF
Power dissipation: 33W
Max. load current: 20A
Kind of package: tube
Leakage current: 20µA
Max. forward impulse current: 70A
Max. forward voltage: 1.62V
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Technische Details B2D20065TF BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 10A x2, Semiconductor structure: common cathode; double, Case: TO3PF, Power dissipation: 33W, Max. load current: 20A, Kind of package: tube, Leakage current: 20µA, Max. forward impulse current: 70A, Max. forward voltage: 1.62V.