B2D20120H1

B2D20120H1 BASiC SEMICONDUCTOR


B2D20120H1.pdf Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 40µA
Max. forward voltage: 1.78V
Power dissipation: 159W
Load current: 20A
Max. forward impulse current: 190A
Max. off-state voltage: 1.2kV
Case: TO247-2
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13+5.63 EUR
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Technische Details B2D20120H1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA, Mounting: THT, Kind of package: tube, Type of diode: Schottky rectifying, Technology: SiC, Semiconductor structure: single diode, Leakage current: 40µA, Max. forward voltage: 1.78V, Power dissipation: 159W, Load current: 20A, Max. forward impulse current: 190A, Max. off-state voltage: 1.2kV, Case: TO247-2.