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B2D20120H1

B2D20120H1 BASiC SEMICONDUCTOR

B2D20120H1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Mounting: THT
Power dissipation: 159W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 40µA
Case: TO247-2
Type of diode: Schottky rectifying
Max. forward impulse current: 190A
Max. forward voltage: 1.78V
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Technische Details B2D20120H1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA, Mounting: THT, Power dissipation: 159W, Technology: SiC, Max. off-state voltage: 1.2kV, Load current: 20A, Kind of package: tube, Semiconductor structure: single diode, Leakage current: 40µA, Case: TO247-2, Type of diode: Schottky rectifying, Max. forward impulse current: 190A, Max. forward voltage: 1.78V.