Produkte > BASIC SEMICONDUCTOR > B2D20120HC1
B2D20120HC1

B2D20120HC1 BASiC SEMICONDUCTOR

B2D20120HC1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 60W
Leakage current: 40µA
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.45 EUR
13+6.7 EUR
30+5.93 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details B2D20120HC1 BASiC SEMICONDUCTOR

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 10A x2, Semiconductor structure: common cathode; double, Case: TO247-3, Max. forward voltage: 2V, Max. load current: 20A, Max. forward impulse current: 90A, Kind of package: tube, Power dissipation: 60W, Leakage current: 40µA.