B2D20120HC1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Max. load current: 20A
Power dissipation: 60W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 6.26 EUR |
| 13+ | 5.63 EUR |
| 30+ | 4.98 EUR |
| 150+ | 4.38 EUR |
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Technische Details B2D20120HC1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 10A x2, Semiconductor structure: common cathode; double, Case: TO247-3, Max. forward voltage: 2V, Max. forward impulse current: 90A, Kind of package: tube, Leakage current: 40µA, Max. load current: 20A, Power dissipation: 60W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D20120HC1 nach Preis ab 4.98 EUR bis 6.26 EUR
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B2D20120HC1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. forward impulse current: 90A Kind of package: tube Leakage current: 40µA Max. load current: 20A Power dissipation: 60W |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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