B2M032120Y BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -4...18V
Gate charge: 40nC
On-state resistance: 50mΩ
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 19.13 EUR |
| 5+ | 17.29 EUR |
| 10+ | 15.22 EUR |
| 30+ | 14.2 EUR |
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Technische Details B2M032120Y BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W, Case: TO247PLUS-4, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Gate-source voltage: -4...18V, Gate charge: 40nC, On-state resistance: 50mΩ, Drain current: 60A, Pulsed drain current: 190A, Power dissipation: 375W, Drain-source voltage: 1.2kV, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2M032120Y nach Preis ab 14.2 EUR bis 19.13 EUR
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B2M032120Y | Hersteller : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Case: TO247PLUS-4 Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Gate-source voltage: -4...18V Gate charge: 40nC On-state resistance: 50mΩ Drain current: 60A Pulsed drain current: 190A Power dissipation: 375W Drain-source voltage: 1.2kV Polarisation: unipolar |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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