B2M032120Y BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Drain current: 60A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 40nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 21.01 EUR |
| 5+ | 14.6 EUR |
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Technische Details B2M032120Y BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W, Case: TO247PLUS-4, Mounting: THT, Kind of package: tube, Drain current: 60A, On-state resistance: 50mΩ, Type of transistor: N-MOSFET, Power dissipation: 375W, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Gate charge: 40nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -4...18V, Pulsed drain current: 190A, Drain-source voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2M032120Y nach Preis ab 14.6 EUR bis 21.01 EUR
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B2M032120Y | Hersteller : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Case: TO247PLUS-4 Mounting: THT Kind of package: tube Drain current: 60A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 40nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 190A Drain-source voltage: 1.2kV |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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