B2M032120Y BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Case: TO247PLUS-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 20.46 EUR |
| 5+ | 14.67 EUR |
| 30+ | 14.66 EUR |
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Technische Details B2M032120Y BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 60A, Pulsed drain current: 190A, Power dissipation: 375W, Case: TO247PLUS-4, Gate-source voltage: -4...18V, On-state resistance: 50mΩ, Mounting: THT, Gate charge: 40nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2M032120Y nach Preis ab 14.66 EUR bis 20.46 EUR
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B2M032120Y | Hersteller : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 60A Pulsed drain current: 190A Power dissipation: 375W Case: TO247PLUS-4 Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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