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B2M065120H

B2M065120H BASiC SEMICONDUCTOR

B2M065120H.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
On-state resistance: 65mΩ
Pulsed drain current: 85A
Power dissipation: 250W
Gate charge: 60nC
Polarisation: unipolar
Technology: SiC
Drain current: 33A
Kind of channel: enhancement
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Technische Details B2M065120H BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W, Case: TO247-3, Mounting: THT, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, On-state resistance: 65mΩ, Pulsed drain current: 85A, Power dissipation: 250W, Gate charge: 60nC, Polarisation: unipolar, Technology: SiC, Drain current: 33A, Kind of channel: enhancement.