B2M065120H BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 65mΩ
Drain current: 33A
Power dissipation: 250W
Pulsed drain current: 85A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| 30+ | 9.95 EUR |
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Technische Details B2M065120H BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W, Case: TO247-3, Mounting: THT, Kind of package: tube, On-state resistance: 65mΩ, Drain current: 33A, Power dissipation: 250W, Pulsed drain current: 85A, Drain-source voltage: 1.2kV, Kind of channel: enhancement, Technology: SiC, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: -4...18V, Gate charge: 60nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2M065120H nach Preis ab 23.84 EUR bis 23.84 EUR
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B2M065120H | Hersteller : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 65mΩ Drain current: 33A Power dissipation: 250W Pulsed drain current: 85A Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: SiC Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 60nC |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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