B2M065120H BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-3
Kind of package: tube
Power dissipation: 250W
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 13.5 EUR |
| 8+ | 9.52 EUR |
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Technische Details B2M065120H BASiC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W, Polarisation: unipolar, Case: TO247-3, Kind of package: tube, Power dissipation: 250W, Gate charge: 60nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -4...18V, Pulsed drain current: 85A, Mounting: THT, Drain-source voltage: 1.2kV, Drain current: 33A, On-state resistance: 65mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2M065120H nach Preis ab 9.52 EUR bis 13.5 EUR
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B2M065120H | Hersteller : BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Polarisation: unipolar Case: TO247-3 Kind of package: tube Power dissipation: 250W Gate charge: 60nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 85A Mounting: THT Drain-source voltage: 1.2kV Drain current: 33A On-state resistance: 65mΩ Type of transistor: N-MOSFET |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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