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B2M065120H

B2M065120H BASiC SEMICONDUCTOR

B2M065120H.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
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6+12.36 EUR
7+11.17 EUR
10+9.88 EUR
30+9.48 EUR
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Technische Details B2M065120H BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 33A, Pulsed drain current: 85A, Power dissipation: 250W, Case: TO247-3, Gate-source voltage: -4...18V, On-state resistance: 65mΩ, Mounting: THT, Gate charge: 60nC, Kind of package: tube, Kind of channel: enhancement.