Produkte > BASIC SEMICONDUCTOR > B2M065120H

B2M065120H BASiC SEMICONDUCTOR

Name: B2M065120H
Brand: BASiC SEMICONDUCTOR
SKU: 29378966-8
Price: 73.20 EUR
Availability: InStock

Hersteller: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
On-state resistance: 65mΩ
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Drain-source voltage: 1.2kV
Kind of package: tube

auf Bestellung 61 Stücke:

Lieferzeit 14-21 Tag (e)

Anzahl	Preis
6+	12.2 EUR
7+	11.01 EUR
10+	9.75 EUR
30+	9.48 EUR

Mindestbestellmenge: 6

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details B2M065120H BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W, Kind of channel: enhancement, Mounting: THT, Type of transistor: N-MOSFET, Technology: SiC, Case: TO247-3, Polarisation: unipolar, Gate-source voltage: -4...18V, Gate charge: 60nC, On-state resistance: 65mΩ, Drain current: 33A, Pulsed drain current: 85A, Power dissipation: 250W, Drain-source voltage: 1.2kV, Kind of package: tube.