B2M065120R BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.91 EUR |
| 7+ | 10.64 EUR |
| 8+ | 10.07 EUR |
| 30+ | 9.67 EUR |
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Technische Details B2M065120R BASiC SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 24A, Pulsed drain current: 85A, Power dissipation: 150W, Case: TO263-7, Gate-source voltage: -4...18V, On-state resistance: 65mΩ, Mounting: SMD, Gate charge: 60nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2M065120R nach Preis ab 9.67 EUR bis 12.91 EUR
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B2M065120R | Hersteller : BASiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Pulsed drain current: 85A Power dissipation: 150W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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