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B2M065120R

B2M065120R BASiC SEMICONDUCTOR

B2M065120R.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Mounting: SMD
Pulsed drain current: 85A
Power dissipation: 150W
Gate charge: 60nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
Case: TO263-7
On-state resistance: 65mΩ
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Technische Details B2M065120R BASiC SEMICONDUCTOR

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W, Mounting: SMD, Pulsed drain current: 85A, Power dissipation: 150W, Gate charge: 60nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 24A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, Case: TO263-7, On-state resistance: 65mΩ.