B2M065120R

B2M065120R BASiC SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECAFDA66F3E0D5&compId=B2M065120R.pdf?ci_sign=0e3de3a19474d2275883166be9641521f7f0b7d0 Hersteller: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Case: TO263-7
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+13.27 EUR
7+10.64 EUR
8+10.05 EUR
30+9.67 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details B2M065120R BASiC SEMICONDUCTOR

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W, Drain-source voltage: 1.2kV, Drain current: 24A, On-state resistance: 65mΩ, Type of transistor: N-MOSFET, Power dissipation: 150W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 60nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -4...18V, Pulsed drain current: 85A, Mounting: SMD, Case: TO263-7, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote B2M065120R nach Preis ab 9.67 EUR bis 13.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
B2M065120R B2M065120R Hersteller : BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECAFDA66F3E0D5&compId=B2M065120R.pdf?ci_sign=0e3de3a19474d2275883166be9641521f7f0b7d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Case: TO263-7
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.27 EUR
7+10.64 EUR
8+10.05 EUR
30+9.67 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH