B2M065120Z BASiC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W, Kind of channel: enhancement, Mounting: THT, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Case: TO247-4, Polarisation: unipolar, Gate-source voltage: -4...18V, Gate charge: 60nC, On-state resistance: 65mΩ, Drain current: 33A, Pulsed drain current: 85A, Power dissipation: 250W, Drain-source voltage: 1.2kV, Kind of package: tube.