Produkte > INFINEON TECHNOLOGIES > BC 860BW H6327
BC 860BW H6327

BC 860BW H6327 Infineon Technologies

bc857series_bc858series_bc859series_bc860series-84816.pdf Hersteller: Infineon Technologies
Bipolar Transistors - BJT AF TRANSISTOR
auf Bestellung 22654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.65 EUR
10+ 0.54 EUR
100+ 0.29 EUR
500+ 0.19 EUR
Mindestbestellmenge: 5
Produktrezensionen
Produktbewertung abgeben

Technische Details BC 860BW H6327 Infineon Technologies

Description: TRANS PNP 45V 0.1A SOT323-3, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: PG-SOT323-3-1, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 250 mW.

Weitere Produktangebote BC 860BW H6327

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BC860BWH6327 BC860BWH6327 Hersteller : Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar