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BCR 198W H6327 Infineon Technologies

Infineon-BCR198SERIES-DS-v01_01-en-514375.pdf Hersteller: Infineon Technologies
Digital Transistors AF DIGITAL TRANSISTOR
auf Bestellung 5826 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
154+0.34 EUR
286+ 0.18 EUR
378+ 0.14 EUR
1000+ 0.13 EUR
3000+ 0.12 EUR
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Technische Details BCR 198W H6327 Infineon Technologies

Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Supplier Device Package: PG-SOT323-3-1, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 190 MHz, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

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BCR198WH6327 BCR198WH6327 Hersteller : Infineon Technologies Infineon-BCR198SERIES-DS-v01_01-en[1].pdf?fileId=db3a304320d39d590121e8552c2f65bb Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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