BF517E6327 Infineon Technologies


INFNS10757-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: RF 0.025, NPN
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
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Technische Details BF517E6327 Infineon Technologies

Description: RF 0.025, NPN, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13dB, Power - Max: 280mW, Current - Collector (Ic) (Max): 25mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V, Frequency - Transition: 2.5GHz, Noise Figure (dB Typ @ f): 3.5dB @ 800MHz, Supplier Device Package: PG-SOT23-3-3, Part Status: Active.