BGH50N65ZF1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.01 EUR |
| 8+ | 9.55 EUR |
| 150+ | 9.18 EUR |
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Technische Details BGH50N65ZF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 357W, Case: TO247-4, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Mounting: THT, Gate charge: 308nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Technology: Field Stop; SiC SBD; Trench, Turn-on time: 54ns, Turn-off time: 476ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BGH50N65ZF1 nach Preis ab 9.55 EUR bis 12.01 EUR
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BGH50N65ZF1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 476ns |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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