BGH50N65ZF1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 357W
Case: TO247-4
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Turn-on time: 54ns
| Anzahl | Preis |
|---|---|
| 6+ | 12.01 EUR |
| 7+ | 10.81 EUR |
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Technische Details BGH50N65ZF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Power dissipation: 357W, Case: TO247-4, Mounting: THT, Gate charge: 308nC, Kind of package: tube, Turn-off time: 476ns, Features of semiconductor devices: integrated anti-parallel diode, Gate-emitter voltage: ±20V, Collector current: 50A, Pulsed collector current: 200A, Collector-emitter voltage: 650V, Turn-on time: 54ns.