BGH75N120HF1 BASiC SEMICONDUCTOR

Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3, Mounting: THT, Kind of package: tube, Turn-on time: 140ns, Gate charge: 398nC, Turn-off time: 443ns, Collector current: 75A, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Power dissipation: 568W, Collector-emitter voltage: 1.2kV, Technology: Field Stop; SiC SBD; Trench, Type of transistor: IGBT, Features of semiconductor devices: integrated anti-parallel diode, Case: TO247-3, Anzahl je Verpackung: 1 Stücke.