BGH75N120HF1 BASiC SEMICONDUCTOR

Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3, Mounting: THT, Type of transistor: IGBT, Power dissipation: 568W, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 398nC, Technology: Field Stop; SiC SBD; Trench, Case: TO247-3, Collector-emitter voltage: 1.2kV, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 200A, Turn-on time: 140ns, Turn-off time: 443ns, Anzahl je Verpackung: 1 Stücke.