Produkte > BASIC SEMICONDUCTOR > BGH75N120HF1

BGH75N120HF1 BASiC SEMICONDUCTOR


BGH75N120HF1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 568W
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247-3
Turn-off time: 443ns
Gate-emitter voltage: ±20V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.02 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BGH75N120HF1 BASiC SEMICONDUCTOR

Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3, Collector current: 75A, Mounting: THT, Collector-emitter voltage: 1.2kV, Power dissipation: 568W, Gate charge: 398nC, Technology: Field Stop; SiC SBD; Trench, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 200A, Type of transistor: IGBT, Turn-on time: 140ns, Kind of package: tube, Case: TO247-3, Turn-off time: 443ns, Gate-emitter voltage: ±20V.