BGH75N120HF1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Collector current: 75A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 568W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Gate charge: 398nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.77 EUR |
| 7+ | 11.55 EUR |
| 10+ | 10.21 EUR |
| 30+ | 9.18 EUR |
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Technische Details BGH75N120HF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3, Collector current: 75A, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Technology: Field Stop; SiC SBD; Trench, Power dissipation: 568W, Collector-emitter voltage: 1.2kV, Type of transistor: IGBT, Features of semiconductor devices: integrated anti-parallel diode, Mounting: THT, Kind of package: tube, Turn-on time: 140ns, Turn-off time: 443ns, Gate charge: 398nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BGH75N120HF1 nach Preis ab 9.18 EUR bis 12.77 EUR
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BGH75N120HF1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3 Collector current: 75A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Field Stop; SiC SBD; Trench Power dissipation: 568W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Kind of package: tube Turn-on time: 140ns Turn-off time: 443ns Gate charge: 398nC |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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