BGH75N65ZF1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.54 EUR |
| 30+ | 12.8 EUR |
| 150+ | 10.72 EUR |
| 600+ | 10.67 EUR |
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Technische Details BGH75N65ZF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Power dissipation: 405W, Case: TO247-4, Mounting: THT, Gate charge: 444nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 84ns, Turn-off time: 565ns, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 300A, Collector-emitter voltage: 650V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BGH75N65ZF1 nach Preis ab 14.54 EUR bis 14.54 EUR
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BGH75N65ZF1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Power dissipation: 405W Case: TO247-4 Mounting: THT Gate charge: 444nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 84ns Turn-off time: 565ns Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Collector-emitter voltage: 650V |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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