BGH75N65ZF1

BGH75N65ZF1 BASiC SEMICONDUCTOR


BGH75N65ZF1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Turn-on time: 84ns
auf Bestellung 29 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BGH75N65ZF1 BASiC SEMICONDUCTOR

Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Power dissipation: 405W, Case: TO247-4, Mounting: THT, Gate charge: 444nC, Kind of package: tube, Turn-off time: 565ns, Features of semiconductor devices: integrated anti-parallel diode, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 300A, Collector-emitter voltage: 650V, Turn-on time: 84ns.