BSC130P03LSGAUMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22.5A; 69W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -22.5A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 69W
Technology: OptiMOS™ P
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
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Technische Details BSC130P03LSGAUMA1 INFINEON TECHNOLOGIES
Description: MOSFET P-CH 30V 12A/22.5A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 22.5A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 22.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 150µA, Supplier Device Package: PG-TDSON-8-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 15 V.
Weitere Produktangebote BSC130P03LSGAUMA1
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BSC130P03LSGAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 12A/22.5A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 22.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 150µA Supplier Device Package: PG-TDSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 15 V |
Produkt ist nicht verfügbar |
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BSC130P03LSGAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 12A/22.5A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 22.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 150µA Supplier Device Package: PG-TDSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 15 V |
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BSC130P03LSGAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -22.5A; 69W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 Gate-source voltage: ±25V Drain-source voltage: -30V Drain current: -22.5A On-state resistance: 13mΩ Type of transistor: P-MOSFET Power dissipation: 69W Technology: OptiMOS™ P Kind of channel: enhanced |
Produkt ist nicht verfügbar |