BSM50GB170DN2HOSA1 Infineon Technologies
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Technische Details BSM50GB170DN2HOSA1 Infineon Technologies
Description: IGBT MOD 1700V 72A 500W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 72 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 500 W, Input Capacitance (Cies) @ Vce: 8 nF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BSM50GB170DN2HOSA1 | Hersteller : Infineon Technologies |
 Description: IGBT MOD 1700V 72A 500WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 500 W Input Capacitance (Cies) @ Vce: 8 nF @ 25 V |
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