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BSP61E6327

BSP61E6327 Infineon Technologies

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Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1598+0.32 EUR
Mindestbestellmenge: 1598 Stücke
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Technische Details BSP61E6327 Infineon Technologies

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Part Status: Active, Supplier Device Package: PG-SOT223, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A, Operating Temperature: 150°C (TJ), Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 1 A, Transistor Type: PNP - Darlington, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk.