BSZ086P03NS3EGATMA INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
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Technische Details BSZ086P03NS3EGATMA INFINEON TECHNOLOGIES
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8, Technology: OptiMOS™ P3, Mounting: SMD, Case: PG-TSDSON-8, Power dissipation: 69W, Kind of channel: enhancement, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain current: -40A, Drain-source voltage: -30V, On-state resistance: 8.6mΩ, Gate-source voltage: ±25V.