BSZ086P03NS3EGATMA INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details BSZ086P03NS3EGATMA INFINEON TECHNOLOGIES
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8, Technology: OptiMOS™ P3, Mounting: SMD, Case: PG-TSDSON-8, Power dissipation: 69W, Polarisation: unipolar, Drain current: -40A, Drain-source voltage: -30V, Kind of channel: enhanced, Type of transistor: P-MOSFET, Gate-source voltage: ±25V, On-state resistance: 8.6mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BSZ086P03NS3EGATMA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
|
BSZ086P03NS3EGATMA | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8 Technology: OptiMOS™ P3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 69W Polarisation: unipolar Drain current: -40A Drain-source voltage: -30V Kind of channel: enhanced Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 8.6mΩ |
Produkt ist nicht verfügbar |