BSZ086P03NS3EGATMA INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 5000 Stücke
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Technische Details BSZ086P03NS3EGATMA INFINEON TECHNOLOGIES
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8, Type of transistor: P-MOSFET, Technology: OptiMOS™ P3, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -40A, Power dissipation: 69W, Case: PG-TSDSON-8, Gate-source voltage: ±25V, On-state resistance: 8.6mΩ, Mounting: SMD, Kind of channel: enhancement, Anzahl je Verpackung: 5000 Stücke.
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BSZ086P03NS3EGATMA | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±25V On-state resistance: 8.6mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |