BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -39.6A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: PG-TSDSON-8
Anzahl je Verpackung: 5000 Stücke
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Technische Details BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8, Mounting: SMD, Drain-source voltage: -30V, Drain current: -39.6A, On-state resistance: 18mΩ, Type of transistor: P-MOSFET, Power dissipation: 40W, Polarisation: unipolar, Technology: OptiMOS™ P3, Kind of channel: enhancement, Gate-source voltage: ±25V, Case: PG-TSDSON-8, Anzahl je Verpackung: 5000 Stücke.
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BSZ180P03NS3EGATMA | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8 Mounting: SMD Drain-source voltage: -30V Drain current: -39.6A On-state resistance: 18mΩ Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Technology: OptiMOS™ P3 Kind of channel: enhancement Gate-source voltage: ±25V Case: PG-TSDSON-8 |
Produkt ist nicht verfügbar |