Produkte > INFINEON TECHNOLOGIES > BSZ180P03NS3EGATMA

BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES

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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement

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Technische Details BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8, Type of transistor: P-MOSFET, Technology: OptiMOS™ P3, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -39.6A, Power dissipation: 40W, Case: PG-TSDSON-8, Gate-source voltage: ±25V, On-state resistance: 18mΩ, Mounting: SMD, Kind of channel: enhancement.