BUK9Y12-55B/C3X Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Power Dissipation (Max): 106W (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Technische Details BUK9Y12-55B/C3X Nexperia USA Inc.
Description: MOSFET N-CH 55V LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta), Power Dissipation (Max): 106W (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).