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BUZ32H3045AATMA1

BUZ32H3045AATMA1 Infineon Technologies


buz32h3045arev2.2.pdffolderiddb3a304325305e6d012596c6ca7b290afileiddb3a304325305e6d01259718c.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 9.5A 3-Pin(2+Tab) D2PAK T/R
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Technische Details BUZ32H3045AATMA1 Infineon Technologies

Description: MOSFET N-CH 200V 9.5A TO263-3, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.

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BUZ32H3045AATMA1 BUZ32H3045AATMA1 Hersteller : Infineon Technologies BUZ32%20H3045A.pdf Description: MOSFET N-CH 200V 9.5A TO263-3
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH