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BXC65R650D BRIDGELUX


Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 21A; 63W; TO252
Type of transistor: N-MOSFET
Case: TO252
Drain-source voltage: 650V
Drain current: 7A
On-state resistance: 0.65Ω
Power dissipation: 63W
Polarisation: unipolar
Kind of package: reel; tube
Gate charge: 13.3nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 21A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
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Technische Details BXC65R650D BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 21A; 63W; TO252, Type of transistor: N-MOSFET, Case: TO252, Drain-source voltage: 650V, Drain current: 7A, On-state resistance: 0.65Ω, Power dissipation: 63W, Polarisation: unipolar, Kind of package: reel; tube, Gate charge: 13.3nC, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 21A, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.

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BXC65R650D Hersteller : BRIDGELUX Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 21A; 63W; TO252
Type of transistor: N-MOSFET
Case: TO252
Drain-source voltage: 650V
Drain current: 7A
On-state resistance: 0.65Ω
Power dissipation: 63W
Polarisation: unipolar
Kind of package: reel; tube
Gate charge: 13.3nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 21A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH