BXP13N50F BRIDGELUX
Hersteller: BRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 961 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 62+ | 1.17 EUR |
| 69+ | 1.04 EUR |
| 110+ | 0.65 EUR |
| 116+ | 0.62 EUR |
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Technische Details BXP13N50F BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 8.1A, Pulsed drain current: 52A, Power dissipation: 51W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 0.46Ω, Mounting: THT, Gate charge: 38nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXP13N50F nach Preis ab 0.62 EUR bis 1.46 EUR
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BXP13N50F | Hersteller : BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.1A Pulsed drain current: 52A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 961 Stücke: Lieferzeit 14-21 Tag (e) |
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