BXP13N50F BRIDGELUX
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Case: TO220F
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 38nC
On-state resistance: 0.46Ω
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 72+ | 1 EUR |
| 80+ | 0.9 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.68 EUR |
| 500+ | 0.6 EUR |
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Technische Details BXP13N50F BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F, Type of transistor: N-MOSFET, Case: TO220F, Kind of package: tube, Mounting: THT, Polarisation: unipolar, Gate charge: 38nC, On-state resistance: 0.46Ω, Drain current: 8.1A, Pulsed drain current: 52A, Power dissipation: 51W, Gate-source voltage: ±30V, Drain-source voltage: 500V, Kind of channel: enhancement.