Produkte > BRIDGELUX > BXP13N50F
BXP13N50F

BXP13N50F BRIDGELUX


BXP13N50.pdf
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Case: TO220F
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 38nC
On-state resistance: 0.46Ω
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
auf Bestellung 941 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
72+1 EUR
80+0.9 EUR
100+0.75 EUR
250+0.68 EUR
500+0.6 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BXP13N50F BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F, Type of transistor: N-MOSFET, Case: TO220F, Kind of package: tube, Mounting: THT, Polarisation: unipolar, Gate charge: 38nC, On-state resistance: 0.46Ω, Drain current: 8.1A, Pulsed drain current: 52A, Power dissipation: 51W, Gate-source voltage: ±30V, Drain-source voltage: 500V, Kind of channel: enhancement.