BXP3N1KD BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; Idm: 12A; 90W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; Idm: 12A; 90W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tube
Kind of channel: enhancement
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Technische Details BXP3N1KD BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; Idm: 12A; 90W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 3A, Pulsed drain current: 12A, Power dissipation: 90W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 6Ω, Mounting: SMD, Gate charge: 18nC, Kind of package: reel; tube, Kind of channel: enhancement.