BXP3N50D BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Power dissipation: 50W
Gate charge: 9nC
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Power dissipation: 50W
Gate charge: 9nC
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
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Technische Details BXP3N50D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 3A, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 3Ω, Mounting: SMD, Kind of package: reel; tube, Kind of channel: enhancement, Power dissipation: 50W, Gate charge: 9nC, Pulsed drain current: 12A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXP3N50D
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BXP3N50D | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO252 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tube Kind of channel: enhancement Power dissipation: 50W Gate charge: 9nC Pulsed drain current: 12A |
Produkt ist nicht verfügbar |