BXP4N60D BRIDGELUX

Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Power dissipation: 77W
Case: TO252
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Pulsed drain current: 16A
Polarisation: unipolar
Drain current: 2.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 2.5Ω

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Technische Details BXP4N60D BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252, Type of transistor: N-MOSFET, Power dissipation: 77W, Case: TO252, Mounting: SMD, Gate charge: 13.2nC, Kind of package: reel; tape, Pulsed drain current: 16A, Polarisation: unipolar, Drain current: 2.5A, Kind of channel: enhancement, Drain-source voltage: 600V, Gate-source voltage: ±30V, On-state resistance: 2.5Ω.