BXP7N65P BRIDGELUX
Hersteller: BRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 703 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 117+ | 0.61 EUR |
| 131+ | 0.55 EUR |
| 164+ | 0.44 EUR |
| 174+ | 0.41 EUR |
| 500+ | 0.4 EUR |
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Technische Details BXP7N65P BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 3.9A, Pulsed drain current: 28A, Power dissipation: 167W, Case: TO220, Gate-source voltage: ±30V, On-state resistance: 1.4Ω, Mounting: THT, Gate charge: 21nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXP7N65P nach Preis ab 0.4 EUR bis 0.89 EUR
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BXP7N65P | Hersteller : BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 167W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 703 Stücke: Lieferzeit 14-21 Tag (e) |
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