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BXP8N50D BRIDGELUX


BXP8N50.pdf Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details BXP8N50D BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 5.3A, Pulsed drain current: 32A, Power dissipation: 100W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 0.9Ω, Mounting: SMD, Gate charge: 25nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

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BXP8N50D Hersteller : BRIDGELUX BXP8N50.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar