BXS045N10C BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 117A
Pulsed drain current: 600A
Power dissipation: 167W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
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Technische Details BXS045N10C BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 117A, Pulsed drain current: 600A, Power dissipation: 167W, Case: PDFN56, Gate-source voltage: ±20V, On-state resistance: 7.5mΩ, Mounting: SMD, Gate charge: 75nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote BXS045N10C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BXS045N10C | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 117A Pulsed drain current: 600A Power dissipation: 167W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |