BXS049N08P BRIDGELUX
Hersteller: BRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 79A; Idm: 560A; 189W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 79A
Pulsed drain current: 560A
Power dissipation: 189W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 591 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 1.23 EUR |
| 91+ | 0.79 EUR |
| 100+ | 0.72 EUR |
| 131+ | 0.55 EUR |
| 138+ | 0.52 EUR |
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Technische Details BXS049N08P BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 85V; 79A; Idm: 560A; 189W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 85V, Drain current: 79A, Pulsed drain current: 560A, Power dissipation: 189W, Case: TO220, Gate-source voltage: ±20V, On-state resistance: 4.9mΩ, Mounting: THT, Gate charge: 72nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXS049N08P nach Preis ab 0.52 EUR bis 1.23 EUR
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BXS049N08P | Hersteller : BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 85V; 79A; Idm: 560A; 189W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 85V Drain current: 79A Pulsed drain current: 560A Power dissipation: 189W Case: TO220 Gate-source voltage: ±20V On-state resistance: 4.9mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 591 Stücke: Lieferzeit 14-21 Tag (e) |
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