Produkte > BRIDGELUX > BXS1150N10M
BXS1150N10M

BXS1150N10M BRIDGELUX

BXS1150N10M.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 16.3nC
auf Bestellung 9529 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
143+0.6 EUR
286+0.3 EUR
408+0.21 EUR
571+0.15 EUR
1142+0.075 EUR
1507+0.056 EUR
1707+0.05 EUR
3000+0.045 EUR
Mindestbestellmenge: 143 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BXS1150N10M BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2.6A, Pulsed drain current: 15.6A, Power dissipation: 2.5W, Case: SOT23-3, Gate-source voltage: ±20V, On-state resistance: 0.15Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 16.3nC.