BXS1150N10M BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Gate charge: 16.3nC
On-state resistance: 0.15Ω
Power dissipation: 2.5W
Drain current: 2.6A
Pulsed drain current: 15.6A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10749 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 290+ | 0.25 EUR |
| 412+ | 0.17 EUR |
| 576+ | 0.12 EUR |
| 1150+ | 0.062 EUR |
| 1520+ | 0.047 EUR |
| 1725+ | 0.041 EUR |
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Technische Details BXS1150N10M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel; tape, Case: SOT23-3, Polarisation: unipolar, Gate charge: 16.3nC, On-state resistance: 0.15Ω, Power dissipation: 2.5W, Drain current: 2.6A, Pulsed drain current: 15.6A, Gate-source voltage: ±20V, Drain-source voltage: 100V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXS1150N10M nach Preis ab 0.037 EUR bis 0.49 EUR
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BXS1150N10M | Hersteller : BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT23-3 Polarisation: unipolar Gate charge: 16.3nC On-state resistance: 0.15Ω Power dissipation: 2.5W Drain current: 2.6A Pulsed drain current: 15.6A Gate-source voltage: ±20V Drain-source voltage: 100V |
auf Bestellung 10749 Stücke: Lieferzeit 14-21 Tag (e) |
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