BXS1150N10M BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 16.3nC
| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 290+ | 0.25 EUR |
| 413+ | 0.17 EUR |
| 579+ | 0.12 EUR |
| 1155+ | 0.062 EUR |
| 1530+ | 0.047 EUR |
| 1731+ | 0.041 EUR |
| 3000+ | 0.037 EUR |
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Technische Details BXS1150N10M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2.6A, Pulsed drain current: 15.6A, Power dissipation: 2.5W, Case: SOT23-3, Gate-source voltage: ±20V, On-state resistance: 0.15Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 16.3nC.