BXS1150N10M BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 15.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3304 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 265+ | 0.27 EUR |
| 378+ | 0.19 EUR |
| 530+ | 0.13 EUR |
| 1060+ | 0.067 EUR |
| 1825+ | 0.039 EUR |
| 1931+ | 0.037 EUR |
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Technische Details BXS1150N10M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2.6A, Power dissipation: 2.5W, Case: SOT23-3, Gate-source voltage: ±20V, On-state resistance: 0.15Ω, Mounting: SMD, Gate charge: 16.3nC, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 15.6A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXS1150N10M nach Preis ab 0.037 EUR bis 0.54 EUR
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BXS1150N10M | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Power dissipation: 2.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 15.6A |
auf Bestellung 3304 Stücke: Lieferzeit 14-21 Tag (e) |
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