BXT070N06D BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 80A, Power dissipation: 108W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 7mΩ, Mounting: SMD, Gate charge: 88nC, Kind of package: reel, Kind of channel: enhancement, Pulsed drain current: 320A, Anzahl je Verpackung: 1 Stücke.