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BXT1000N06M

BXT1000N06M BRIDGELUX


BXT1000N06M.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1245 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
358+0.2 EUR
536+0.13 EUR
766+0.093 EUR
1245+0.057 EUR
Mindestbestellmenge: 278
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Technische Details BXT1000N06M BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3, Mounting: SMD, Type of transistor: N-MOSFET, Case: SOT23-3, Polarisation: unipolar, Gate charge: 5.2nC, On-state resistance: 0.11Ω, Power dissipation: 1.5W, Drain current: 2A, Pulsed drain current: 12A, Gate-source voltage: ±20V, Drain-source voltage: 60V, Kind of package: reel; tape, Kind of channel: enhancement.