BXT1100P02M BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -10A
On-state resistance: 0.11Ω
Power dissipation: 1.25W
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -10A
On-state resistance: 0.11Ω
Power dissipation: 1.25W
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
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Technische Details BXT1100P02M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3A, Case: SOT23, Gate-source voltage: ±10V, Mounting: SMD, Kind of channel: enhancement, Pulsed drain current: -10A, On-state resistance: 0.11Ω, Power dissipation: 1.25W, Kind of package: reel, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT1100P02M
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BXT1100P02M | Hersteller : BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Case: SOT23 Gate-source voltage: ±10V Mounting: SMD Kind of channel: enhancement Pulsed drain current: -10A On-state resistance: 0.11Ω Power dissipation: 1.25W Kind of package: reel |
Produkt ist nicht verfügbar |