BXT1150N10D BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Case: TO252
Drain-source voltage: 100V
Drain current: 12.8A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 64A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4505 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 252+ | 0.28 EUR |
| 317+ | 0.23 EUR |
| 353+ | 0.20 EUR |
| 589+ | 0.12 EUR |
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Technische Details BXT1150N10D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252, Case: TO252, Drain-source voltage: 100V, Drain current: 12.8A, On-state resistance: 135mΩ, Type of transistor: N-MOSFET, Power dissipation: 78W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 21nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 64A, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT1150N10D nach Preis ab 0.12 EUR bis 0.34 EUR
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BXT1150N10D | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Case: TO252 Drain-source voltage: 100V Drain current: 12.8A On-state resistance: 135mΩ Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 64A Mounting: SMD |
auf Bestellung 4505 Stücke: Lieferzeit 14-21 Tag (e) |
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