BXT1150N10D BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Pulsed drain current: 64A
Power dissipation: 78W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4505 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 256+ | 0.28 EUR |
| 321+ | 0.22 EUR |
| 358+ | 0.2 EUR |
| 596+ | 0.12 EUR |
| 633+ | 0.11 EUR |
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Technische Details BXT1150N10D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 12.8A, Pulsed drain current: 64A, Power dissipation: 78W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 135mΩ, Mounting: SMD, Gate charge: 21nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT1150N10D nach Preis ab 0.11 EUR bis 0.33 EUR
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BXT1150N10D | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.8A Pulsed drain current: 64A Power dissipation: 78W Case: TO252 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 4505 Stücke: Lieferzeit 14-21 Tag (e) |
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