Produkte > BRIDGELUX > BXT1150N10D

BXT1150N10D BRIDGELUX


BXT1150N10D.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Mounting: SMD
Pulsed drain current: 64A
Power dissipation: 78W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 135mΩ
auf Bestellung 4308 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
277+0.31 EUR
345+0.25 EUR
388+0.21 EUR
459+0.19 EUR
511+0.17 EUR
1000+0.14 EUR
2500+0.13 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BXT1150N10D BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252, Mounting: SMD, Pulsed drain current: 64A, Power dissipation: 78W, Gate charge: 21nC, Polarisation: unipolar, Drain current: 12.8A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: TO252, On-state resistance: 135mΩ.