BXT1150N10D BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Mounting: SMD
Pulsed drain current: 64A
Power dissipation: 78W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 12.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 135mΩ
| Anzahl | Privatkunde |
|---|---|
| 239+ | 0.36 EUR |
| 277+ | 0.31 EUR |
| 345+ | 0.25 EUR |
| 388+ | 0.21 EUR |
| 459+ | 0.19 EUR |
| 511+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.13 EUR |
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Technische Details BXT1150N10D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252, Mounting: SMD, Pulsed drain current: 64A, Power dissipation: 78W, Gate charge: 21nC, Polarisation: unipolar, Drain current: 12.8A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: TO252, On-state resistance: 135mΩ.

