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BXT1150N10D

BXT1150N10D BRIDGELUX

BXT1150N10D.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Drain current: 12.8A
Gate-source voltage: ±20V
Pulsed drain current: 64A
Drain-source voltage: 100V
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Technische Details BXT1150N10D BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD, Case: TO252, Polarisation: unipolar, Gate charge: 21nC, On-state resistance: 135mΩ, Power dissipation: 78W, Drain current: 12.8A, Gate-source voltage: ±20V, Pulsed drain current: 64A, Drain-source voltage: 100V.