BXT1150N10D BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Drain current: 12.8A
Gate-source voltage: ±20V
Pulsed drain current: 64A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4404 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 277+ | 0.26 EUR |
| 345+ | 0.21 EUR |
| 388+ | 0.18 EUR |
| 459+ | 0.16 EUR |
| 511+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
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Technische Details BXT1150N10D BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: TO252, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 21nC, On-state resistance: 135mΩ, Power dissipation: 78W, Drain current: 12.8A, Gate-source voltage: ±20V, Pulsed drain current: 64A, Drain-source voltage: 100V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT1150N10D nach Preis ab 0.11 EUR bis 0.3 EUR
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BXT1150N10D | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO252 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 21nC On-state resistance: 135mΩ Power dissipation: 78W Drain current: 12.8A Gate-source voltage: ±20V Pulsed drain current: 64A Drain-source voltage: 100V |
auf Bestellung 4404 Stücke: Lieferzeit 14-21 Tag (e) |
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