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BXT1150N10J

BXT1150N10J BRIDGELUX

BXT1150N10J.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 32A
Power dissipation: 2W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
auf Bestellung 12366 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
385+0.23 EUR
455+0.19 EUR
569+0.15 EUR
637+0.13 EUR
763+0.11 EUR
852+0.1 EUR
1000+0.094 EUR
3000+0.088 EUR
4000+0.081 EUR
Mindestbestellmenge: 385 Stücke
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Technische Details BXT1150N10J BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 5.6A, Pulsed drain current: 32A, Power dissipation: 2W, Case: SOT89-3, Gate-source voltage: ±20V, On-state resistance: 135mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 21nC.