BXT1150N10J BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Drain-source voltage: 100V
Drain current: 5.6A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Power dissipation: 2W
Mounting: SMD
Case: SOT89-3
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Drain-source voltage: 100V
Drain current: 5.6A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Power dissipation: 2W
Mounting: SMD
Case: SOT89-3
Anzahl je Verpackung: 5 Stücke
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Technische Details BXT1150N10J BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3, Drain-source voltage: 100V, Drain current: 5.6A, On-state resistance: 135mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 21nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 32A, Power dissipation: 2W, Mounting: SMD, Case: SOT89-3, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote BXT1150N10J
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BXT1150N10J | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Drain-source voltage: 100V Drain current: 5.6A On-state resistance: 135mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 32A Power dissipation: 2W Mounting: SMD Case: SOT89-3 |
Produkt ist nicht verfügbar |