Produkte > BRIDGELUX > BXT1150N10J
BXT1150N10J

BXT1150N10J BRIDGELUX

BXT1150N10J.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89-3
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 32A
Power dissipation: 2W
Gate charge: 21nC
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 135mΩ
auf Bestellung 11806 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
385+0.23 EUR
451+0.19 EUR
561+0.15 EUR
629+0.13 EUR
754+0.11 EUR
842+0.1 EUR
1000+0.095 EUR
3000+0.089 EUR
4000+0.081 EUR
Mindestbestellmenge: 385 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BXT1150N10J BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Case: SOT89-3, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 32A, Power dissipation: 2W, Gate charge: 21nC, Drain current: 5.6A, Kind of channel: enhancement, Drain-source voltage: 100V, Gate-source voltage: ±20V, On-state resistance: 135mΩ.