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BXT1150N10J

BXT1150N10J BRIDGELUX

BXT1150N10J.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Mounting: SMD
Pulsed drain current: 32A
Power dissipation: 2W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 5.6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT89-3
On-state resistance: 135mΩ
auf Bestellung 806 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
385+0.23 EUR
455+0.19 EUR
571+0.15 EUR
638+0.13 EUR
764+0.11 EUR
806+0.11 EUR
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Technische Details BXT1150N10J BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3, Mounting: SMD, Pulsed drain current: 32A, Power dissipation: 2W, Gate charge: 21nC, Polarisation: unipolar, Drain current: 5.6A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOT89-3, On-state resistance: 135mΩ.