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BXT1150N10J

BXT1150N10J BRIDGELUX

BXT1150N10J.pdf
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT89-3
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 2W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 100V
auf Bestellung 12367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
459+0.16 EUR
574+0.12 EUR
642+0.11 EUR
769+0.093 EUR
858+0.083 EUR
1000+0.078 EUR
3000+0.074 EUR
4000+0.067 EUR
Mindestbestellmenge: 385
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Technische Details BXT1150N10J BRIDGELUX

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: SOT89-3, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 21nC, On-state resistance: 135mΩ, Power dissipation: 2W, Drain current: 5.6A, Gate-source voltage: ±20V, Pulsed drain current: 32A, Drain-source voltage: 100V.