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BXT230P03B

BXT230P03B BRIDGELUX

BXT230P03B.pdf
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 3.9W
Gate charge: 28nC
Polarisation: unipolar
Drain current: -7A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 34mΩ
auf Bestellung 1824 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
236+0.36 EUR
275+0.31 EUR
345+0.25 EUR
385+0.23 EUR
500+0.19 EUR
1000+0.17 EUR
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Technische Details BXT230P03B BRIDGELUX

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8, Mounting: SMD, Pulsed drain current: -40A, Power dissipation: 3.9W, Gate charge: 28nC, Polarisation: unipolar, Drain current: -7A, Kind of channel: enhancement, Drain-source voltage: -30V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOP8, On-state resistance: 34mΩ.