BXT2800N10M BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3
Power dissipation: 2.8W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 0.31Ω
Drain current: 1.4A
Pulsed drain current: 8.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4069 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 782+ | 0.092 EUR |
| 993+ | 0.072 EUR |
| 1107+ | 0.065 EUR |
| 1316+ | 0.054 EUR |
| 1916+ | 0.037 EUR |
| 2025+ | 0.035 EUR |
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Technische Details BXT2800N10M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3, Power dissipation: 2.8W, Mounting: SMD, Type of transistor: N-MOSFET, Case: SOT23-3, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 12nC, On-state resistance: 0.31Ω, Drain current: 1.4A, Pulsed drain current: 8.8A, Gate-source voltage: ±20V, Drain-source voltage: 100V, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT2800N10M nach Preis ab 0.035 EUR bis 0.13 EUR
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BXT2800N10M | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3 Power dissipation: 2.8W Mounting: SMD Type of transistor: N-MOSFET Case: SOT23-3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 12nC On-state resistance: 0.31Ω Drain current: 1.4A Pulsed drain current: 8.8A Gate-source voltage: ±20V Drain-source voltage: 100V Kind of channel: enhancement |
auf Bestellung 4069 Stücke: Lieferzeit 14-21 Tag (e) |
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